Memristor structures

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United States of America Patent

PATENT NO 9793473
APP PUB NO 20160218285A1
SERIAL NO

14914808

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Abstract

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A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LPHOUSTON, TX8793

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Patent Info (Count) # Cites Year
 
SHARP KABUSHIKI KAISHA (1)
* 2012/0025,163 NON-VOLATILE SEMICONDUCTOR DEVICE 2 2011
 
THE REGENTS OF THE UNIVERSITY OF MICHIGAN (1)
* 2011/0317,470 RECTIFICATION ELEMENT AND METHOD FOR RESISTIVE SWITCHING FOR NON VOLATILE MEMORY DEVICE 94 2010
 
CROSSBAR, INC. (3)
* 2012/0043,519 DEVICE SWITCHING USING LAYERED DEVICE STRUCTURE 77 2010
* 2014/0185,358 RESISTIVE RANDOM ACCESS MEMORY WITH NON-LINEAR CURRENT-VOLTAGE RELATIONSHIP 4 2013
* 2014/0268,998 RRAM WITH DUAL MODE OPERATION 22 2013
 
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (1)
2013/0214,235 RESISTIVE MEMORY HAVING RECTIFYING CHARACTERISTICS OR AN OHMIC CONTACT LAYER 2 2011
 
IMEC (1)
* 2011/0044,089 Method for Manufacturing a Resistive Switching Memory Cell Comprising a Nickel Oxide Layer Operable at Low-Power and Memory Cells Obtained Thereof 16 2010
 
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP (1)
2011/0266,513 Superconductor Memristor Devices 16 2009
 
PANASONIC CORPORATION (1)
* 2010/0008,128 RESISTIVE NONVOLATILE MEMORY ELEMENT, AND PRODUCTION METHOD OF THE SAME 9 2009
 
SAMSUNG ELECTRONICS CO., LTD. (3)
2008/0006,907 Non-volatile memory device including a variable resistance material 90 2007
7804703 Phase change memory device having Schottky diode and method of fabricating the same 3 2008
8350262 Nonvolatile memory device and nonvolatile memory array including the same 2 2011
 
OVONYX MEMORY TECHNOLOGY, LLC (1)
2012/0168,705 Bipolar Switching Memory Cell With Built-in "On" State Rectifying Current-Voltage Characteristics 6 2010
 
HYNIX SEMICONDUCTOR INC. (1)
8212232 Resistance changing device and method for fabricating the same 3 2010
* Cited By Examiner

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