Methods of manufacturing photomasks, methods of forming photoresist patterns and methods of manufacturing semiconductor devices
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United States of America Patent
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Oct 24, 2017
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app pub date -
Dec 30, 2015
filing date -
Jan 9, 2015
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Abstract
A method of patterning a photoresist layer includes forming a photoresist layer on a substrate, exposing the photoresist layer to light using a first light source so as to induce a chemical change in the photoresist layer, performing a post-exposure bake process on the photoresist layer, the post-exposure bake process including irradiating the photoresist layer with at least two shots of laser light from a second light source such that the photoresist layer is heated to a first temperature, and performing a developing process on the photoresist layer after the post-exposure bake process, the development process selectively removing a portion of the photoresist layer.
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