Parasitic channel mitigation via back side implantation

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United States of America Patent

PATENT NO 9799520
SERIAL NO

14847240

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Abstract

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III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

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Patent Owner(s)

  • MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Roberts, John Claassen Hillsborough, US 23 541

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