Double trench isolation

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9799527
APP PUB NO 20160111493A1
SERIAL NO

14519740

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Abstract

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Isolation is provided by forming a first trench, depositing a cover layer on the bottom and sidewalls of the first trench, selectively removing the cover layer from the bottom and forming a second trench extending from the bottom of the first trench. The second trench is then substantially filled by thermal oxide formed by oxidation and the first trench is subsequently filled with a deposited dielectric.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukuo, Noritaka Yokkaichi, JP 16 178
Futase, Takuya Yokkaichi, JP 43 847
Kakegawa, Tomoyasu Yokkaichi, JP 17 185
Takahashi, Yuji Yokkaichi, JP 365 5674
Yamada, Katsuo Yokkaichi, JP 23 241

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