Method for forming conductive structure in semiconductor structure
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United States of America Patent
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Oct 24, 2017
Grant Date -
May 18, 2017
app pub date -
Nov 16, 2015
filing date -
Nov 16, 2015
priority date (Note) -
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Abstract
A method for manufacturing a semiconductor structure is provided. The method includes forming a first dielectric layer over a substrate and forming a sacrificial layer over the first dielectric layer. The method further includes forming an opening in the sacrificial layer and etching the first dielectric layer to form a via hole through the opening. The method further includes forming a conductive structure in the via hole and the opening and removing the sacrificial layer to expose an upper portion of the conductive structure. The method further includes forming a second dielectric layer around the upper portion of the conductive material.
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