Semiconductor device having structure for improving voltage drop and device including the same
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United States of America Patent
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Oct 24, 2017
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Jul 13, 2016
filing date -
Jul 16, 2015
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Abstract
A semiconductor device includes a semiconductor substrate and a plurality of metal layers above the semiconductor substrate. A first of the metal layers includes a plurality of first power rails which extend in a first direction and provide a first voltage, a plurality of second power rails which extend in the first direction and provide a second voltage, and a first conductor which is integral with one end of each of the first power rails and extends in a second direction. The first direction is perpendicular to the second direction. The first voltage is one of a ground voltage and a power source voltage and the second voltage is the other voltage.
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