Semiconductor device and method of fabricating the same

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United States of America Patent

PATENT NO 9799606
SERIAL NO

14637640

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Abstract

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A semiconductor device includes a first conductive pattern on a substrate, an insulating diffusion barrier layer conformally covering a surface of the first conductive pattern, the insulation diffusion barrier layer exposed by an air gap region adjacent to a sidewall of the first conductive pattern, and a second conductive pattern on the first conductive pattern, the second conductive pattern penetrating the insulating diffusion barrier layer so as to be in contact with the first conductive pattern.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Sang Hoon Goyang-si, KR 40 798
Baek, Jongmin Suwon-si, KR 83 605
Lee, Nae-In Seoul, KR 107 1866
Rha, Sangho Seongnam-si, KR 22 377
You, Wookyung Suwon-si, KR 35 388

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