Semiconductor device and manufacturing method of the same
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United States of America Patent
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Oct 24, 2017
Issued Date -
N/A
app pub date -
Jul 14, 2015
filing date -
Jul 18, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device includes a substrate, a laminated wiring layer unit, a nitride film disposed on the laminated wiring layer unit, a semiconductor element portion, a sealing portion surrounding the element portion. In the sealing portion, multiple wiring layers are connected with a sealing layer to configure a sealing structure which surrounds the element portion. The laminated wiring layer unit includes an uppermost layer which is made of material having higher adhesion to an uppermost wiring layer, and a protection insulating film made of material having higher adhesion to the sealing layer than the nitride film is disposed on the nitride film. In the sealing portion, a via-hole is defined in the protection insulating film, the nitride film, and the uppermost insulating film to partially expose the uppermost wiring layer. The sealing layer is embedded into the via-hole and is also disposed on a protection insulating film around the via-hole.
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