Semiconductor structure and manufacturing method thereof

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United States of America Patent

PATENT NO 9799625
SERIAL NO

14738109

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Abstract

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A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the first substrate or the second substrate; heating the adhesive in a first ambiance; bonding the first substrate with the second substrate by applying a force of less than about 10,000N upon the first substrate or the second substrate and heating the adhesive in a second ambiance; and thinning down a thickness of the first substrate from the second surface.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Kuo-Pin Tainan, TW 54 720
Hsieh, Ching-Hua Hsinchu, TW 227 1916
Huang, Isaac Tainan, TW 4 6
Huang, Tsung Lung Tainan, TW 4 6
Kalnitsky, Alexander San Francisco, US 269 2527
Ku, Chin-Yu Hsinchu, TW 61 117
Kuo, Cheng-Yu Kaohsiung, TW 16 23
Lei, Yi-Yang Taichung, TW 26 186
Liao, De-Dui Hsin-Chu, TW 8 69
Liu, Chung-Shi Hsinchu, TW 773 10176
Liu, Kuo-Chio Hsinchu, TW 50 210
Wang, Hsi-Ching Taoyuan, TW 5 6
Wu, Kai-Di Tainan, TW 14 9
Yang, Sheng-Pin Kaohsiung, TW 10 10
Yu, Chen-Hua Hsinchu, TW 2039 41095

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