Three dimensional NAND device containing dielectric pillars for a buried source line and method of making thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9799670
SERIAL NO

15017961

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A three-dimensional memory device includes an alternating stack of electrically conductive layers and insulating layers located over a substrate, an array of memory stack structures, each memory stack structure extending through the alternating stack and including a memory film and a semiconductor channel laterally surrounded by the memory film, and an array of dielectric pillars located between the alternating stack and the substrate.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ge, Chun Milpitas, US 14 506
Liu, Jin Milpitas, US 305 3422
Nishikawa, Masatoshi Yokkaichi, JP 57 1123
Zhang, Yanli San Jose, US 172 3784

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Apr 24, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 Apr 24, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00