FinFET and method for manufacturing the same

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United States of America Patent

PATENT NO 9799771
SERIAL NO

14690720

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Abstract

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Methods for manufacturing a FinFET and a FinFET are provided. In various embodiments, the method for manufacturing a FinFET includes etching a base substrate to form a trapezoidal fin structure. Next, an isolation layer is deposited covering the etched base substrate. Then, the trapezoidal fin structure is exposed. The trapezoidal fin structure includes a top surface and a bottom surface, and the top surface has a width larger than that of the bottom surface.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Che-Cheng New Taipei, TW 401 2400
Cheng, Tung-Wen New Taipei, TW 63 409
Lin, Mu-Tsang Hemei Township, TW 47 257
Zhang, Zhe-Hao Hsinchu, TW 27 172

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