Process kit of physical vapor deposition chamber and fabricating method thereof

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United States of America Patent

PATENT NO 9803274
SERIAL NO

14080561

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Abstract

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A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 μm.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bih, Shih-Wei Taichung, TW 2 1
Chen, Wei-Jen Taichung, TW 140 736
Chen, Yen-Yu Taichung, TW 228 1392
Hsiao, Hsien-Chieh Taichung, TW 1 1
Lee, Chang-Sheng Shin-Chu, TW 24 395
Liao, Wei-Chen Nantou County, TW 10 10
Zhang, Wei Chupei, TW 2322 17837

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