Method for etching copper layer

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United States of America Patent

PATENT NO 9803286
SERIAL NO

14512638

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Abstract

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Provided is a method of etching a copper layer. The method includes generating plasma of a processing gas within a processing container which accommodates an object to be processed that includes the copper layer and a metal mask formed on the copper layer. The metal mask contains titanium. In addition, the processing gas includes CH4 gas, oxygen gas, and a noble gas. In an exemplary embodiment, the metal mask may include a layer made of TiN.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nakayama, Kei Miyagi, JP 34 262
Nishimura, Eiichi Miyagi, JP 130 2719
Shimoda, Keiichi Miyagi, JP 7 41

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