Method for producing group III-nitride wafers and group III-nitride wafers
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United States of America Patent
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Oct 31, 2017
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app pub date -
Feb 25, 2009
filing date -
Feb 25, 2008
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Abstract
The present invention discloses a production method for group III nitride ingots or pieces such as wafers. To solve the coloration problem in the wafers grown by the ammonothermal method, the present invention composed of the following steps; growth of group III nitride ingots by the ammonothermal method, slicing of the ingots into wafers, annealing of the wafers in a manner that avoids dissociation or decomposition of the wafers. This annealing process is effective to improve transparency of the wafers and/or otherwise remove contaminants from wafers.
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