Writing to multi-port memories

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United States of America Patent

PATENT NO 9805779
SERIAL NO

14547840

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Abstract

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A circuit includes a first memory cell and a data control circuit configured to provide first data and second data. The first memory cell has a first port and a second port. The first data is written from the first port to the first memory cell. The second data is based on information of the first data. The second port is configured to write the second data to the first memory cell based on a detection of a write disturb caused by the second port to the first port.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Katoch, Atul Kanata, CA 91 373
O'Connell, Cormac Michael Kanata, CA 37 114

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