Low temperature nanowire growth on arbitrary substrates

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United States of America Patent

PATENT NO 9805928
SERIAL NO

15059368

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Abstract

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The present invention provides a method to manufacture nanowires. In various embodiments, a method is provided for producing an oxidized metal layer as a heterogeneous seed layer on arbitrary substrate for controlled nanowire growth is disclosed which comprises depositing a metal layer on a substrate, oxidizing the metal layer in air ambient or in oxidizing agent, and growing nanowires at low temperatures on oxidized metal layers on virtually any substrate.

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Patent Owner(s)

Patent OwnerAddress
THE CURATORS OF THE UNIVERSITY OF MISSOURIOFFICE OF TECHNOLOGY MANAGEMENT AND INDUSTRY RELATIONS UNIVERSITY OF MISSOURI - MISSOURI INNOVATION CENTER 1601 S PROVIDENCE ROAD SUITE 124 COLUMBIA MO 65211-3460

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Baek Hyun Columbia, US 6 22
Kwon, Jae Wan Columbia, US 17 131

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