Semiconductor device and manufacturing method thereof
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United States of America Patent
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Oct 31, 2017
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N/A
app pub date -
Dec 11, 2014
filing date -
Jul 21, 2011
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Abstract
A manufacturing method forms an oxide insulating layer and a first plasma etching treatment forms a depressed portion therein. A second plasma etching treatment forms a trench including curved lower corner portions. An oxide semiconductor film is formed in contact with a bottom portion, the curved lower corner portions, and side portions of the trench. Source and electrodes are formed to be electrically connected to the oxide semiconductor film. A gate insulating layer is formed over the oxide semiconductor film and a gate electrode is formed over the gate insulating layer. The first plasma etching treatment is performed with a first bias power and a first power of a first power source, and the second plasma etching treatment is performed with a second bias power and a second power of a second power source, wherein the second bias power is lower than the first bias power.
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