Method for forming deep trench spacing isolation for CMOS image sensors

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United States of America Patent

PATENT NO 9805970
APP PUB NO 20170084646A1
SERIAL NO

15364955

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Abstract

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A method for manufacturing an image sensor with deep trench spacing isolation is provided. A trench is formed in a semiconductor substrate, around and between a plurality of pixel regions of the semiconductor substrate. A cap is formed using epitaxy to seal a gap between sidewalls of the trench. Pixel sensors corresponding to the plurality of pixel regions are formed over or within the corresponding pixel regions. An image sensor resulting from the method is also provided.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Jung-I Hsinchu, TW 13 38
Lin, Ta-Chun Zhubei, TW 76 78
Lin, Tien-Lu Hsinchu, TW 101 244
Wang, Chen-Jong Hsin-Chu, TW 120 1630
Yang, Tai-I Hsinchu, TW 88 261

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