Method of forming semiconductor structure including suspended semiconductor layer and resulting structure
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United States of America Patent
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Oct 31, 2017
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N/A
app pub date -
Dec 1, 2016
filing date -
Dec 1, 2016
priority date (Note) -
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Abstract
One aspect of the disclosure is directed to a method of forming a semiconductor structure including: forming a fin over a substrate within a device region, the fin including alternating layers of a sacrificial material and a semiconductor material, and including a lower channel region; forming a dopant-containing layer over the fin and the substrate; exposing an upper portion of the fin by removing the dopant-containing layer from the upper portion of the fin; removing the sacrificial material from the fin thereby suspending the semiconductor material within the fin between a pair of spacers and over the lower channel region of the fin; performing an anneal to drive in dopants from the dopant-containing layer to the lower channel region of the fin; and forming an active gate over the lower channel region of the fin and substantially surrounding the suspended semiconductor material over the lower channel region of the fin.
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