Semiconductor devices having a TSV, a front-side bumping pad, and a back-side bumping pad
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United States of America Patent
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Oct 31, 2017
Grant Date -
Jun 2, 2016
app pub date -
Nov 30, 2015
filing date -
Dec 1, 2014
priority date (Note) -
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Abstract
Semiconductor devices are provided. The semiconductor devices include a substrate, a first interlayer insulating layer disposed on a front-side of the substrate, a TSV structure passing through the first interlayer insulating layer and the substrate. The TSV structure has a bottom end protruding from a back-side of the substrate, a back-side insulating layer and a back-side passivation layer disposed on the back-side of the substrate, and a bumping pad buried in the back-side insulating layer and the back-side passivation layer and disposed on the bottom end of the TSV structure. The bottom end of the TSV structure protrudes into the back-side bumping pad, and top surfaces of the back-side passivation layer and the back-side bumping pad are coplanar.
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