Semiconductor device structure and manufacturing method

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United States of America Patent

PATENT NO 9806046
SERIAL NO

14208948

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Abstract

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A semiconductor device structure and a manufacturing method are provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive trace over the dielectric layer. The semiconductor device structure further includes a conductive feature over the conductive trace, and a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace. In addition, the semiconductor device structure includes a conductive bump over the conductive feature.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chun-Jen Jhubei, TW 133 421
Cheng, Hsi-Kuei Zhubei, TW 53 191
Lai, Yi-Jen Hsinchu, TW 37 139
Lee, Li-Guo Taipei, TW 10 28
Liu, Yi-Chen Zhubei, TW 27 59
Liu, Yung-Sheng Hsinchu, TW 15 45

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