Vertical floating gate NAND with selectively deposited ALD metal films

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United States of America Patent

PATENT NO 9806090
SERIAL NO

15177737

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Abstract

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A method of making a monolithic three dimensional NAND string which contains a semiconductor channel and a plurality of control gate electrodes, includes selectively forming a plurality of discrete charge storage regions using atomic layer deposition. The plurality of discrete charge storage regions includes at least one of a metal or an electrically conductive metal oxide.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kanakamedala, Senaka San Jose, US 60 1022
Kwon, Thomas Jongwan Dublin, US 22 410
Makala, Raghuveer S Campbell, US 246 6420
Matamis, George Danville, US 116 3240
Sharangpani, Rahul Fremont, US 126 3214

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