FinFET structure and method for manufacturing thereof

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United States of America Patent

PATENT NO 9806154
SERIAL NO

14600781

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Present disclosure provides a FinFET structure, including a fin and a gate surrounding a first portion of the fin. A dopant concentration in the first portion of the fin is lower than about 1E17/cm3. The FinFET structure further includes an insulating layer surrounding a second portion of the fin. The dopant concentration of the second portion of the fin is greater than about 8E15/cm3. The insulating layer includes a lower layer and an upper layer, and the lower layer is disposed over a substrate connecting to the fin and has a dopant concentration greater than about 1E19/cm3.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kei-Wei Tainan, TW 224 1018
Chong, Lai-Wan Kaohsiung, TW 7 38
Lee, Chien-Wei Hsinchu, TW 50 70
Tsai, Chun Hsiung Hsinchu County, TW 198 3305

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