Tuned semiconductor amplifier

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United States of America Patent

PATENT NO 9806159
SERIAL NO

14878952

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Abstract

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Methods and structures for improving the performance of integrated semiconductor transistors operating at high frequency and/or high power are described. Two capacitors may be connected to an input of a semiconductor transistor and tuned to suppress second-harmonic generation and to transform and match the input impedance of the device. A two-stage tuning procedure is described. The transistor may comprise gallium nitride and may be configured as a power transistor capable of handling up to 1000 W of power. A tuned transistor may operate at frequencies up to 6 GHz with a peak drain efficiency greater than 60%.

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Patent Owner(s)

  • MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nagy, Walter H Raleigh, US 8 112
Pattison, Lyndon Newtownabbey, IE 4 28

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