Semiconductor device having a plurality of transistors connected in parallel
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United States of America Patent
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Oct 31, 2017
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app pub date -
Jul 17, 2015
filing date -
Jul 28, 2014
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Abstract
A semiconductor device SD includes a substrate SUB, a plurality of gate electrodes GE, a gate pad GEP, and gate interconnects GINC. The plurality of gate electrodes GE are formed in the substrate SUB, and extend electrically in parallel to each other. The gate pad GEP is formed in a region different from that in which the plurality of gate electrodes GE are formed in the substrate SUB. Each of a plurality of gate interconnects GINC connects the plurality of gate electrodes GE to the gate pad GEP.
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