Semiconductor devices and methods of fabricating the same
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United States of America Patent
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Oct 31, 2017
Issued Date -
N/A
app pub date -
Jan 9, 2017
filing date -
Jan 13, 2016
priority date (Note) -
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Abstract
A semiconductor device includes an active pattern, a gate electrode, a gate capping pattern, and a gate spacer. The active pattern extends in a first direction parallel to a top surface of the substrate. The gate electrode extends in a second direction parallel to the top surface of the substrate and intersects the active pattern. The gate capping pattern covers a top surface of the gate electrode and extends in a direction crossing the top surface of the substrate to cover a first sidewall of the gate electrode. The gate spacer covers a second sidewall of the gate electrode. The first sidewall and the second sidewall are opposite to each other in the second direction.
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