Vertical tunneling field-effect transistor cell and fabricating the same

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United States of America Patent

PATENT NO 9806172
SERIAL NO

14874398

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Abstract

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A tunneling field-effect transistor (TFET) device is disclosed. A protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. Isolation features are formed on the substrate. A drain region is disposed over the substrate adjacent to the protrusion structure and extends to a bottom portion of the protrusion structure as a raised drain region. A drain contact is disposed over the drain region and overlap with the isolation feature.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chuang, Harry-Hak-Lay Singapore, TW 355 2363
Kuo, Cheng-Cheng Hsinchu, TW 33 294
Zhu, Ming Singapore, TW 232 1782

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