FinFET structure and method for fabricating the same
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United States of America Patent
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Oct 31, 2017
Issued Date -
N/A
app pub date -
Dec 9, 2016
filing date -
Mar 17, 2014
priority date (Note) -
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Abstract
A method comprises recessing a substrate to form a fin enclosed by an isolation region, wherein the substrate is formed of a first semiconductor material, recessing the fin to form a trench over a lower portion of the fin, growing a second semiconductor material in the trench to form a middle portion of the fin through a first epitaxial process, forming a first carbon doped layer over the lower portion through a second epitaxial process, growing the first semiconductor material over the first carbon doped layer to form an upper portion of the fin through a third epitaxial process, forming a first source/drain region through a fourth epitaxial process, wherein a second carbon doped layer is formed underlying the first source/drain region and applying a thermal oxidation process to the middle portion of the fin to form an oxide outer layer.
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