Non-volatile memory device and method of manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9806185
SERIAL NO

13716078

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A non-volatile memory device and a method of manufacturing the same are provided. The device includes a substrate including a cell region and a peripheral region, a gate pattern formed over the substrate in the peripheral region, a multilayered structure formed over the gate pattern in the peripheral region, the multilayered structure including interlayer insulating layers and material layers for sacrificial layers, and a capping layer formed between the gate pattern and the multilayered structure in the peripheral region to cover the substrate, the capping layer configured to prevent diffusion of impurities from the material layers for the sacrificial layers into the substrate in the peripheral region.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • SK HYNIX INC.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Dong Kee Seoul, KR 15 90

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Apr 30, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 Apr 30, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00