Semiconductor device
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United States of America Patent
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Oct 31, 2017
Grant Date -
Sep 10, 2015
app pub date -
Mar 3, 2015
filing date -
Mar 7, 2014
priority date (Note) -
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Abstract
A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.
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