N-type aluminum nitride monocrystalline substrate

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United States of America Patent

PATENT NO 9806205
SERIAL NO

15329597

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A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 μm; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.

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Patent Owner(s)

  • TOKUYAMA CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kinoshita, Toru Yamaguchi, JP 27 244
Nagashima, Toru Yamaguchi, JP 24 93

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