Photoelectric conversion element
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United States of America Patent
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Oct 31, 2017
Grant Date -
Dec 24, 2015
app pub date -
Mar 3, 2014
filing date -
Mar 4, 2013
priority date (Note) -
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Abstract
A photoelectric conversion element includes a semiconductor, an intrinsic layer disposed on the semiconductor and containing hydrogenated amorphous silicon, a first-conductivity-type layer that covers a part of the intrinsic layer and contains hydrogenated amorphous silicon of a first conductivity type, a second-conductivity-type layer that covers a part of the intrinsic layer and contains hydrogenated amorphous silicon of a second conductivity type, an insulating film covering an end region of the first-conductivity-type layer, a first electrode disposed on the first-conductivity-type layer, and a second electrode disposed on the second-conductivity-type layer. An end portion of the second-conductivity-type layer is located on the insulating film or above the insulating film.
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