Photodetector using bandgap-engineered 2D materials and method of manufacturing the same

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United States of America Patent

PATENT NO 9806218
SERIAL NO

15085100

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Heo, Jinseong Seoul, KR 106 265
Lee, Eunkyu Yongin-si, KR 50 144
Lee, Jaeho Seoul, KR 266 2206
Lee, Kiyoung Seoul, KR 42 237
Lee, Sangyeob Hwaseong-si, KR 22 137
Park, Seongjun Seoul, KR 104 563

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