Dry plasma etch method to pattern MRAM stack

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9806252
SERIAL NO

14749291

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Methods are suitable for fabricating MRAM structures and may involve integrating ALD and ALE processes without breaking vacuum.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Taeseung San Jose, US 22 828
Lill, Thorsten Santa Clara, US 101 3753
Marks, Jeffrey Saratoga, US 108 5192
Tan, Samantha Fremont, US 49 3743
Yang, Wenbing Fremont, US 38 1271

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Apr 30, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 Apr 30, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00