Resistive memory device having sidewall spacer electrode and method of making thereof

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United States of America Patent

PATENT NO 9806256
SERIAL NO

15299919

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Abstract

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A resistive memory device includes a first electrode, a sidewall spacer electrode located on a sidewall of a dielectric material contacting the first electrode, a resistive memory cell containing a resistive memory material and contacting the sidewall spacer electrode, and a second electrode containing the resistive memory cell.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kumar, Tanmay Pleasanton, US 106 3385
Pan, Chuanbin San Jose, US 18 996
Wu, Ming-Che San Jose, US 62 490
Zhou, Guangle Fremont, US 9 320

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