Optoelectronic devices including twisted bilayers

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United States of America Patent

PATENT NO 9808782
SERIAL NO

15279263

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Abstract

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An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moiré superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers.

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Patent Owner(s)

  • MASSACHUSETTS INSTITUTE OF TECHNOLOGY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Ju Weston, US 66 136
Qian, Xiaofeng Winchester, US 6 221
Wu, Menghao Hubei, CN 3 10

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