Tunneling magneto-resistor device for sensing a magnetic field

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United States of America Patent

PATENT NO 9810748
APP PUB NO 20160291097A1
SERIAL NO

14967235

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Abstract

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A tunneling magneto-resistor (TMR) device for sensing a magnetic field includes a first TMR sensor having a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. Each of the first and second MTJ devices has a pinned layer and a free layer. The pinned layer of each of the first and second MTJ devices has a pinned magnetization at a first pinned direction. The free layers of the first and second MTJ devices have a first free magnetization parallel to and a second free magnetization anti-parallel to a first easy-axis respectively.

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Patent Owner(s)

  • INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kuo, Keng-Ming Yunlin County, TW 11 67
Wang, Ding-Yeong Hsinchu County, TW 15 148

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