Method for lithography patterning

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United States of America Patent

PATENT NO 9810978
SERIAL NO

15056259

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Abstract

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A EUV mask comprises a low thermal expansion material (LTEM) substrate, a reflective multi-layer (ML) over the LTEM substrate, and a patterned absorber layer over the reflective ML. The reflective ML includes a defect. The EUV mask further comprises a mark associated with the defect. The mark is one of: a deposit over the patterned absorber layer at a distance offset from the defect, and a cavity into the patterned absorber layer in an area over the defect.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chu, Yuan-Chih New Taipei, TW 23 82
Shih, Hsun-Chuan Hsinchu County, TW 7 27

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