Chemical treatment for lithography improvement in a negative tone development process

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United States of America Patent

PATENT NO 9810990
APP PUB NO 20160274463A1
SERIAL NO

14658354

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Abstract

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A material layer is formed over a substrate. A negative tone photoresist layer is formed over the material layer. An exposure process is performed to the negative tone photoresist layer. A post-exposure bake (PEB) process is performed to the negative tone photoresist layer. After the exposure process and the PEB process, the negative tone photoresist layer is treated with a solvent. The solvent contains a chemical having a greater dipole moment than n-butyl acetate (n-BA).

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Ching-Yu Hsin-Chu, TW 531 6712
Lai, Wei-Han Hsin-Chu, TW 58 115
Lin, Chin-Hsiang Hsin-Chu, TW 407 5595
Wang, Siao-Shan Hsin-Chu, TW 15 23
Wu, Cheng-Han Hsin-Chu, TW 102 241

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