Memory devices with improved refreshing operation

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United States of America Patent

PATENT NO 9812182
SERIAL NO

15250212

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Abstract

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A method and a system for memory cell programming and erasing with refreshing operation are disclosed. The system includes a selecting module, a processing module and a refresh module. In the method, at first, a target memory cell from a plurality of memory cells in a memory device is selected. Thereafter, the target memory cell belonging to a line of the matrix is programmed or erased by applying a selecting voltage on the target memory cell and a location-related memory cell belonging to the line of the matrix. Then, a refreshing operation to refresh the location-related cell is performed.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chih, Yue-Der Hsinchu, TW 110 812
Kuo, Cheng-Hsiung Jhubei, TW 52 249
Li, Gu-Huan Zhubei, TW 33 77
Liu, Chien-Yin Hsinchu, TW 23 72

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