Thru-silicon-via structures

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United States of America Patent

PATENT NO 9812359
SERIAL NO

14733445

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Abstract

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Stress generation free thru-silicon-via structures with improved performance and reliability and methods of manufacture are provided. The method includes forming a first conductive diffusion barrier liner on an insulator layer within a thru-silicon-via of a wafer material. The method further includes forming a stress absorption layer on the first conductive diffusion barrier. The method further includes forming a second conductive diffusion barrier on the stress absorption layer. The method further includes forming a copper plate on the second conductive diffusion barrier.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Fen Williston, US 112 767
Farooq, Mukta G Hopewell Junction, US 212 3354
Graas, Carole D Jericho, US 23 149
Liu, Xiao Hu Briarcliff Manor, US 70 1157

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