Combination grinding after laser (GAL) and laser on-off function to increase die strength
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United States of America Patent
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Nov 7, 2017
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app pub date -
Mar 11, 2014
filing date -
Sep 11, 2013
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Abstract
Consistent with an example embodiment, there is a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side. The method comprises pre-grinding the backside of a wafer substrate to a thickness. The front-side of the wafer is mounted onto a protective foil. A laser is applied to the backside of the wafer, at first focus depth to define a secondary modification zone in saw lanes. To the backside of the wafer, a second laser process is applied, at a second focus depth shallower than that of the first focus depth, in the saw lanes to define a main modification zone, the secondary modification defined at a pre-determined location within active device boundaries, the active device boundaries defining an active device area. The backside of the wafer is ground down to a depth so as to remove the main modification zone. The IC device die are separated from one another by stretching the protective foil.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- NXP B.V.
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Albermann, Guido | Hamburg, DE | 13 | 66 |
Buenning, Hartmut | Hamburg, DE | 15 | 125 |
Lapke, Martin | Hamburg, DE | 9 | 64 |
Moeller, Sascha | Hamburg, DE | 17 | 102 |
Rohleder, Thomas | Hamburg, DE | 7 | 57 |
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