Semiconductor devices including conductive features with capping layers and methods of forming the same

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United States of America Patent

PATENT NO 9812390
SERIAL NO

15157033

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Abstract

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Semiconductor devices, methods of manufacture thereof, and methods of forming conductive features thereof are disclosed. A semiconductor device includes an insulating material layer disposed over a workpiece. The insulating material layer includes a silicon-containing material comprising about 13% or greater of carbon (C). A conductive feature is disposed within the insulating material layer. The conductive feature includes a capping layer disposed on a top surface thereof.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Mei-Ling Kaohsiung, TW 80 227
Lin, Keng-Chu Ping-Tung, TW 178 628
Liou, Joung-Wei Zhudong, TW 63 433
Yang, Hui-Chun Hsin-Chu, TW 14 52

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