Fin-type resistor

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9812444
SERIAL NO

15592256

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Abstract

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A semiconductor device and method for fabricating such a device are presented. The semiconductor device includes a fin extending away from a substrate, a plurality of epitaxially grown regions disposed along a top surface of the fin, and at least two contacts that provide electrical contact to the fin. The plurality of epitaxially grown regions are arranged to alternate with regions having no epitaxial material grown on the top surface of the fin. A resistance exists between the two contacts that is at least partially based on the arrangement of the plurality of epitaxially grown regions.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fan, Hsueh-Shih Hsinchu, TW 5 31
Hu, Chia-Hsin Changhua, TW 34 1222
Huang, Huan-Tsung Hsinchu, TW 21 200

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