Photodiode gate dielectric protection layer
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United States of America Patent
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Nov 7, 2017
Grant Date -
Sep 22, 2016
app pub date -
Jun 1, 2016
filing date -
Jul 23, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
The present disclosure relates to a method the present disclosure relates to an integrated chip having an active pixel sensor with a gate dielectric protection layer that reduces damage to an underlying gate dielectric layer during fabrication, and an associated method of formation. In some embodiments, the integrated chip has a photodetector disposed within a substrate, and a gate structure located over the substrate. A gate dielectric protection layer is disposed over the substrate and extends from along a sidewall of the gate structure to a location overlying the photodetector. The gate dielectric protection layer has an upper surface that is vertically below an upper surface of the gate structure.
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