III-nitride P-channel transistor

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United States of America Patent

PATENT NO 9812532
SERIAL NO

14838958

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Abstract

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A field effect transistor includes a III-Nitride channel layer, a III-Nitride doped cap layer on the channel layer, a source electrode in contact with the III-Nitride cap layer, a drain electrode in contact with the III-Nitride cap layer, a gate electrode located between the source and the drain electrodes, and a gate dielectric layer between the gate electrode and the III-Nitride undoped channel layer, wherein the cap layer is doped to provide mobile holes, and wherein the gate dielectric layer comprises a layer of AlN in contact with the channel layer.

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Patent Owner(s)

  • HRL LABORATORIES, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cao, Yu Agoura Hills, US 387 9107
Chen, Mary Y Oak Park, US 13 223
Chu, Rongming Agoura Hills, US 54 1410
Li, Zijian “Ray” Thousand Oaks, US 6 69

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