Common metal contact regions having different Schottky barrier heights and methods of manufacturing same

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United States of America Patent

PATENT NO 9812543
SERIAL NO

15060761

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Abstract

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Methods for forming a semiconductor device having dual Schottky barrier heights using a single metal and the resulting device are provided. Embodiments include providing a substrate having an n-FET region and a p-FET region, each region including a gate between source/drain regions; applying a mask over the n-FET region; selectively amorphizing a surface of the p-FET region source/drain regions while the n-FET region is masked; removing the mask; depositing a titanium-based metal over the n-FET and p-FET region source/drain regions; and microwave annealing.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Tek Po Rinus Malta, US 16 85
Liu, Jinping Ballston lake, US 83 1089
Xie, Ruilong Niskayuna, US 1432 10785

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