LDMOS device having a low angle sloped oxide
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United States of America Patent
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Nov 7, 2017
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app pub date -
Jul 3, 2016
filing date -
Jul 3, 2016
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Abstract
A laterally diffused metal oxide semiconductor (LDMOS) device that may include an oxide region that comprises a bottom surface; a drain that is positioned between a left drift region and a right drift region and below the bottom surface; wherein the oxide region further comprises a first sloped surface and a second sloped surface; wherein a first angle between the first sloped surface and the bottom surface does not exceed twenty degrees; and wherein a second angle between the second sloped surface and the bottom surface of the oxide region does not exceed twenty degrees.
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