Semiconductor device and fabricating method thereof
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United States of America Patent
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Nov 7, 2017
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N/A
app pub date -
Mar 25, 2014
filing date -
Jan 15, 2014
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Abstract
A semiconductor device and a method of fabricating the semiconductor device are provided. The semiconductor device includes a substrate; a source/drain region having a first dopant in the substrate; a barrier layer having a second dopant formed around the source/drain region in the substrate. When a semiconductor device is scaled down, the doped profile in source/drain regions might affect the threshold voltage uniformity, the provided semiconductor device may improve the threshold voltage uniformity by the barrier layer to control the doped profile.
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