Reacted conductive gate electrodes and methods of making the same
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United States of America Patent
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Nov 7, 2017
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N/A
app pub date -
Apr 25, 2016
filing date -
Jun 25, 2002
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Abstract
A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.
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